Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.617854
Title: Study on p-type ZnO: A potential new source of solid state lighting
Authors: Yu, Z.G.
Wu, P.
Gong, H. 
Keywords: Dopant source
p-type
ZnO
Issue Date: 2005
Citation: Yu, Z.G.,Wu, P.,Gong, H. (2005). Study on p-type ZnO: A potential new source of solid state lighting. Proceedings of SPIE - The International Society for Optical Engineering 5941 : 1-7. ScholarBank@NUS Repository. https://doi.org/10.1117/12.617854
Abstract: Although GaN is widely applied in UV light emitting diodes (LEDs) and laser diodes (LDs) applications, its intrinsic properties may limits its potential in the development of large scale consumer products. ZnO, on the other hand, is a known potent candidate for UV-LEDs and LDs. However, it is very difficult to fabricate p-type ZnO because of a strong self-compensation effect of intrinsic defects. In this study, we shall discuss the growth conditions that favor p-type ZnO based on first principles density functional theory (DFT) calculations. Selection of doping source and the corresponding thin film fabrication techniques and experimental results will be discussed also.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/107310
ISSN: 0277786X
DOI: 10.1117/12.617854
Appears in Collections:Staff Publications

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