Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81384
Title: Breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices upon current stressing
Authors: Cha, C.L.
Chor, E.F. 
Gong, H. 
Zhang, A.Q.
Chan, L.
Issue Date: 1997
Source: Cha, C.L.,Chor, E.F.,Gong, H.,Zhang, A.Q.,Chan, L. (1997). Breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices upon current stressing. Proceedings of the IEEE Hong Kong Electron Devices Meeting : 82-85. ScholarBank@NUS Repository.
Abstract: The characteristic of reoxidized nitrided SiO2 (ONO) breakdown in Flash memory devices, upon current stressing is being investigated. Results indicate that current stressing on the ONO layer is very detrimental to the performance of the Flash device, and this situation is inevitable during the device fabrication. It is found that with a constant current of 5 μA passing through an ONO layer of `200A' thickness (with an area of 50,000 μm2), it takes just only a mere 20 seconds to kill the device. The situation worsens when the polarity is reversed (a negative current of the same magnitude passing through the ONO layer) and the device almost immediately breaks down. It was reported that the dielectric breakdown was triggered by accumulated holes, but we believe that for our situation, several other causes are possible for the short breakdown time of the ONO layer, especially during the negative-current flow. These include the imperfect interface at the bottom oxide and nitride, the trapped charges in the oxide and the band-bending at the interfaces of polysilicon and oxide, and they are being discussed.
Source Title: Proceedings of the IEEE Hong Kong Electron Devices Meeting
URI: http://scholarbank.nus.edu.sg/handle/10635/81384
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