Effects of aluminum on the properties of p-type Cu-Al-O transparent oxide semiconductor prepared by reactive co-sputtering

Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0040-6090(03)01175-1

Title:	Effects of aluminum on the properties of p-type Cu-Al-O transparent oxide semiconductor prepared by reactive co-sputtering
Authors:	Ong, C.H. Gong, H.
Keywords:	CuAlO2 Oxides P-Type Sputtering
Issue Date:	15-Dec-2003
Citation:	Ong, C.H., Gong, H. (2003-12-15). Effects of aluminum on the properties of p-type Cu-Al-O transparent oxide semiconductor prepared by reactive co-sputtering. Thin Solid Films 445 (2) : 299-303. ScholarBank@NUS Repository. https://doi.org/10.1016/S0040-6090(03)01175-1
Abstract:	p-Type Cu-Al-O films are successfully prepared by using radio frequency magnetron reactive co-sputtering deposition with Cu and Al metallic targets. Stoichiometric Cu/Al atomic percentage ratio has been achieved. The films show good transmittance in the range of 20-80% with an average thickness of 250 nm. The optical direct band gaps of the films are found in the range of 2.9-3.3 eV depending on the aluminum content. Blue-shift in absorption edge and optical band gap broadening effect are found with the increase of Al content in the films. © 2003 Elsevier B.V. All rights reserved.
Source Title:	Thin Solid Films
URI:	http://scholarbank.nus.edu.sg/handle/10635/107268
ISSN:	00406090
DOI:	10.1016/S0040-6090(03)01175-1
Appears in Collections:	Staff Publications

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