Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.405375
Title: The use of sample rotation in SIMS profiling of Ta barrier layers to Cu diffusion
Authors: Liu, R. 
Wee, A.T.S. 
Liu, L. 
Hao, G. 
Keywords: Cu metallization
Sample rotation
Secondary ion mass spectrometry
Ta barriers
Issue Date: 2000
Source: Liu, R., Wee, A.T.S., Liu, L., Hao, G. (2000). The use of sample rotation in SIMS profiling of Ta barrier layers to Cu diffusion. Proceedings of SPIE - The International Society for Optical Engineering 4227 : 98-102. ScholarBank@NUS Repository. https://doi.org/10.1117/12.405375
Abstract: Copper has attracted attention as a new interconnection material for metallization because of its lower bulk resistivity and higher resistance to electromigration than Al and its alloys. However, Cu diffusion into Si and SiO2 during annealing degrades the reliability of VLSL devices. A barrier layer is therefore an important in realizing Cu interconnection technology. Tantalum (Ta) thin films are very stable barrier film against Cu diffusion. The sensitivity and depth resolution of the SIMS technique make it an attractive tool for monitoring Cu diffusion. In this study, Cu/Ta/SiO2/Si samples were heat treated at 400°C ∼ 850°C, and analyzed by a Cameca IMS 6f SIMS instrument with oxygen beam under various conditions. Specially, the use of a rotating stage on SIMS provides significant improvement in depth resolution for polycrystalline metal film samples.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/113122
ISSN: 0277786X
DOI: 10.1117/12.405375
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