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Title: Surface electronic structure of nitric-oxide-treated indium tin oxide
Authors: Jianqiao, H.
Jisheng, P.
Zhu, F.
Hao, G. 
Issue Date: 2003
Citation: Jianqiao, H.,Jisheng, P.,Zhu, F.,Hao, G. (2003). Surface electronic structure of nitric-oxide-treated indium tin oxide. Materials Research Society Symposium - Proceedings 796 : 111-117. ScholarBank@NUS Repository.
Abstract: The surface electronic properties of the nitric oxide (NO) treated indium tin oxide (ITO) are examined in-situ by a four-point probe and X-ray photoelectron spectroscopy (XPS). The XPS N1s peak emerged at a high binding energy of 404 eV indicating that NO is reactive with ITO. NO adsorption induces an increase of film sheet resistance, arising from an oxygen rich layer near the ITO surface region, with approximately 2.5 nm thick. This implies that the interaction of NO with ITO is occurred around surface region. Valence band maximum measured for NO-absorbed ITO was shifted to the low binding energy side. This is related to the upward surface band bending.
Source Title: Materials Research Society Symposium - Proceedings
ISSN: 02729172
Appears in Collections:Staff Publications

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