Dielectric polarization relaxation measurement in α-SiO2 by means of a scanning electron microscope technique

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.354928

Title:	Dielectric polarization relaxation measurement in α-SiO2 by means of a scanning electron microscope technique
Authors:	Oh, K.H. Le Gressus, C. Gong, H. Ong, C.K. Tan, B.T.G. Ding, X.Z.
Issue Date:	1993
Citation:	Oh, K.H., Le Gressus, C., Gong, H., Ong, C.K., Tan, B.T.G., Ding, X.Z. (1993). Dielectric polarization relaxation measurement in α-SiO2 by means of a scanning electron microscope technique. Journal of Applied Physics 74 (2) : 1250-1255. ScholarBank@NUS Repository. https://doi.org/10.1063/1.354928
Abstract:	A scanning electron microscope is used as a tool to study dielectric relaxation processes in α-SiO2 by measuring the leakage current in the sample surrounded by a metallic aperture. A transient time (t t) of the order of a few seconds appears before the steady-state current is established. The time dependence of the trapping rate is found to follow a power law and to be related to relaxation processes of a dielectric under electrical and thermal stress.
Source Title:	Journal of Applied Physics
URI:	http://scholarbank.nus.edu.sg/handle/10635/96217
ISSN:	00218979
DOI:	10.1063/1.354928
Appears in Collections:	Staff Publications

There are no files associated with this item.

Check