Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.354928
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dc.titleDielectric polarization relaxation measurement in α-SiO2 by means of a scanning electron microscope technique
dc.contributor.authorOh, K.H.
dc.contributor.authorLe Gressus, C.
dc.contributor.authorGong, H.
dc.contributor.authorOng, C.K.
dc.contributor.authorTan, B.T.G.
dc.contributor.authorDing, X.Z.
dc.date.accessioned2014-10-16T09:20:54Z
dc.date.available2014-10-16T09:20:54Z
dc.date.issued1993
dc.identifier.citationOh, K.H., Le Gressus, C., Gong, H., Ong, C.K., Tan, B.T.G., Ding, X.Z. (1993). Dielectric polarization relaxation measurement in α-SiO2 by means of a scanning electron microscope technique. Journal of Applied Physics 74 (2) : 1250-1255. ScholarBank@NUS Repository. https://doi.org/10.1063/1.354928
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96217
dc.description.abstractA scanning electron microscope is used as a tool to study dielectric relaxation processes in α-SiO2 by measuring the leakage current in the sample surrounded by a metallic aperture. A transient time (t t) of the order of a few seconds appears before the steady-state current is established. The time dependence of the trapping rate is found to follow a power law and to be related to relaxation processes of a dielectric under electrical and thermal stress.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.354928
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.354928
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume74
dc.description.issue2
dc.description.page1250-1255
dc.identifier.isiutA1993LM78200076
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