Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.354928
Title: Dielectric polarization relaxation measurement in α-SiO2 by means of a scanning electron microscope technique
Authors: Oh, K.H. 
Le Gressus, C.
Gong, H. 
Ong, C.K. 
Tan, B.T.G. 
Ding, X.Z.
Issue Date: 1993
Citation: Oh, K.H., Le Gressus, C., Gong, H., Ong, C.K., Tan, B.T.G., Ding, X.Z. (1993). Dielectric polarization relaxation measurement in α-SiO2 by means of a scanning electron microscope technique. Journal of Applied Physics 74 (2) : 1250-1255. ScholarBank@NUS Repository. https://doi.org/10.1063/1.354928
Abstract: A scanning electron microscope is used as a tool to study dielectric relaxation processes in α-SiO2 by measuring the leakage current in the sample surrounded by a metallic aperture. A transient time (t t) of the order of a few seconds appears before the steady-state current is established. The time dependence of the trapping rate is found to follow a power law and to be related to relaxation processes of a dielectric under electrical and thermal stress.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/96217
ISSN: 00218979
DOI: 10.1063/1.354928
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

12
checked on Aug 14, 2018

WEB OF SCIENCETM
Citations

12
checked on Aug 6, 2018

Page view(s)

45
checked on Aug 17, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.