Please use this identifier to cite or link to this item:
|Title:||Dielectric polarization relaxation measurement in α-SiO2 by means of a scanning electron microscope technique|
|Authors:||Oh, K.H. |
Le Gressus, C.
|Citation:||Oh, K.H., Le Gressus, C., Gong, H., Ong, C.K., Tan, B.T.G., Ding, X.Z. (1993). Dielectric polarization relaxation measurement in α-SiO2 by means of a scanning electron microscope technique. Journal of Applied Physics 74 (2) : 1250-1255. ScholarBank@NUS Repository. https://doi.org/10.1063/1.354928|
|Abstract:||A scanning electron microscope is used as a tool to study dielectric relaxation processes in α-SiO2 by measuring the leakage current in the sample surrounded by a metallic aperture. A transient time (t t) of the order of a few seconds appears before the steady-state current is established. The time dependence of the trapping rate is found to follow a power law and to be related to relaxation processes of a dielectric under electrical and thermal stress.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 25, 2018
WEB OF SCIENCETM
checked on May 9, 2018
checked on Apr 20, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.