Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.354928
Title: | Dielectric polarization relaxation measurement in α-SiO2 by means of a scanning electron microscope technique |
Authors: | Oh, K.H. Le Gressus, C. Gong, H. Ong, C.K. Tan, B.T.G. Ding, X.Z. |
Issue Date: | 1993 |
Citation: | Oh, K.H., Le Gressus, C., Gong, H., Ong, C.K., Tan, B.T.G., Ding, X.Z. (1993). Dielectric polarization relaxation measurement in α-SiO2 by means of a scanning electron microscope technique. Journal of Applied Physics 74 (2) : 1250-1255. ScholarBank@NUS Repository. https://doi.org/10.1063/1.354928 |
Abstract: | A scanning electron microscope is used as a tool to study dielectric relaxation processes in α-SiO2 by measuring the leakage current in the sample surrounded by a metallic aperture. A transient time (t t) of the order of a few seconds appears before the steady-state current is established. The time dependence of the trapping rate is found to follow a power law and to be related to relaxation processes of a dielectric under electrical and thermal stress. |
Source Title: | Journal of Applied Physics |
URI: | http://scholarbank.nus.edu.sg/handle/10635/96217 |
ISSN: | 00218979 |
DOI: | 10.1063/1.354928 |
Appears in Collections: | Staff Publications |
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