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|Title:||Dielectric polarization relaxation measurement in α-SiO2 by means of a scanning electron microscope technique|
|Authors:||Oh, K.H. |
Le Gressus, C.
|Citation:||Oh, K.H., Le Gressus, C., Gong, H., Ong, C.K., Tan, B.T.G., Ding, X.Z. (1993). Dielectric polarization relaxation measurement in α-SiO2 by means of a scanning electron microscope technique. Journal of Applied Physics 74 (2) : 1250-1255. ScholarBank@NUS Repository. https://doi.org/10.1063/1.354928|
|Abstract:||A scanning electron microscope is used as a tool to study dielectric relaxation processes in α-SiO2 by measuring the leakage current in the sample surrounded by a metallic aperture. A transient time (t t) of the order of a few seconds appears before the steady-state current is established. The time dependence of the trapping rate is found to follow a power law and to be related to relaxation processes of a dielectric under electrical and thermal stress.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
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