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|Title:||Charge trapping on different cuts of a single-crystalline α-SiO 2||Authors:||Gong, H.
Le Gressus, C.
|Issue Date:||1993||Citation:||Gong, H., Le Gressus, C., Oh, K.H., Ding, X.Z., Ong, C.K., Tan, B.T.G. (1993). Charge trapping on different cuts of a single-crystalline α-SiO 2. Journal of Applied Physics 74 (3) : 1944-1948. ScholarBank@NUS Repository. https://doi.org/10.1063/1.354778||Abstract:||A scanning electron microscope is employed for the investigation of charging on different cuts of an α-SiO2. A method for the determination of trapped charges is proposed. Charging on different cuts is observed to decrease in the order of z cut, 30° cut, 45° cut, and 60° cut of the α-SiO2. This phenomenon is related to permittivity, defect density, and stress of the samples. Details of the experiments and the method of charge determination are given.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/95977||ISSN:||00218979||DOI:||10.1063/1.354778|
|Appears in Collections:||Staff Publications|
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