Please use this identifier to cite or link to this item:
|Title:||Charge trapping on different cuts of a single-crystalline α-SiO 2||Authors:||Gong, H.
Le Gressus, C.
|Issue Date:||1993||Citation:||Gong, H., Le Gressus, C., Oh, K.H., Ding, X.Z., Ong, C.K., Tan, B.T.G. (1993). Charge trapping on different cuts of a single-crystalline α-SiO 2. Journal of Applied Physics 74 (3) : 1944-1948. ScholarBank@NUS Repository. https://doi.org/10.1063/1.354778||Abstract:||A scanning electron microscope is employed for the investigation of charging on different cuts of an α-SiO2. A method for the determination of trapped charges is proposed. Charging on different cuts is observed to decrease in the order of z cut, 30° cut, 45° cut, and 60° cut of the α-SiO2. This phenomenon is related to permittivity, defect density, and stress of the samples. Details of the experiments and the method of charge determination are given.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/95977||ISSN:||00218979||DOI:||10.1063/1.354778|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 10, 2019
WEB OF SCIENCETM
checked on Oct 3, 2019
checked on Oct 12, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.