Charge trapping on different cuts of a single-crystalline α-SiO 2

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.354778

Title:	Charge trapping on different cuts of a single-crystalline α-SiO 2
Authors:	Gong, H. Le Gressus, C. Oh, K.H. Ding, X.Z. Ong, C.K. Tan, B.T.G.
Issue Date:	1993
Citation:	Gong, H., Le Gressus, C., Oh, K.H., Ding, X.Z., Ong, C.K., Tan, B.T.G. (1993). Charge trapping on different cuts of a single-crystalline α-SiO 2. Journal of Applied Physics 74 (3) : 1944-1948. ScholarBank@NUS Repository. https://doi.org/10.1063/1.354778
Abstract:	A scanning electron microscope is employed for the investigation of charging on different cuts of an α-SiO2. A method for the determination of trapped charges is proposed. Charging on different cuts is observed to decrease in the order of z cut, 30° cut, 45° cut, and 60° cut of the α-SiO2. This phenomenon is related to permittivity, defect density, and stress of the samples. Details of the experiments and the method of charge determination are given.
Source Title:	Journal of Applied Physics
URI:	http://scholarbank.nus.edu.sg/handle/10635/95977
ISSN:	00218979
DOI:	10.1063/1.354778
Appears in Collections:	Staff Publications

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