Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.354778
Title: Charge trapping on different cuts of a single-crystalline α-SiO 2
Authors: Gong, H. 
Le Gressus, C.
Oh, K.H. 
Ding, X.Z.
Ong, C.K. 
Tan, B.T.G. 
Issue Date: 1993
Source: Gong, H., Le Gressus, C., Oh, K.H., Ding, X.Z., Ong, C.K., Tan, B.T.G. (1993). Charge trapping on different cuts of a single-crystalline α-SiO 2. Journal of Applied Physics 74 (3) : 1944-1948. ScholarBank@NUS Repository. https://doi.org/10.1063/1.354778
Abstract: A scanning electron microscope is employed for the investigation of charging on different cuts of an α-SiO2. A method for the determination of trapped charges is proposed. Charging on different cuts is observed to decrease in the order of z cut, 30° cut, 45° cut, and 60° cut of the α-SiO2. This phenomenon is related to permittivity, defect density, and stress of the samples. Details of the experiments and the method of charge determination are given.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/95977
ISSN: 00218979
DOI: 10.1063/1.354778
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