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|Title:||On the dominant interface trap generation process during hot-carrier stressing||Authors:||Ang, D.S.
Charge pumping current
Lightly doped drain
|Issue Date:||2001||Citation:||Ang, D.S.,Ling, C.H. (2001). On the dominant interface trap generation process during hot-carrier stressing. Annual Proceedings - Reliability Physics (Symposium) : 412-418. ScholarBank@NUS Repository.||Abstract:||The analysis of a kink, observed in the charge pumping current versus stress time curve, supports the recent claim of a new interface-trap generation mechanism during hot-carrier stress. The trap generation process, which relates to the interaction between hot carriers and the Si-SiO2 interface, proceeds with a generation coefficient higher than those of hot-hole or hot-electron injection. With its dominance in the late stage, it is likely to limit the lifetime of N-MOSFETs under ac operation.||Source Title:||Annual Proceedings - Reliability Physics (Symposium)||URI:||http://scholarbank.nus.edu.sg/handle/10635/84038||ISSN:||00999512|
|Appears in Collections:||Staff Publications|
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