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https://scholarbank.nus.edu.sg/handle/10635/84038
Title: | On the dominant interface trap generation process during hot-carrier stressing | Authors: | Ang, D.S. Ling, C.H. |
Keywords: | Ac stress Charge pumping current Hot carrier Interface trap Lightly doped drain MOSFET |
Issue Date: | 2001 | Citation: | Ang, D.S.,Ling, C.H. (2001). On the dominant interface trap generation process during hot-carrier stressing. Annual Proceedings - Reliability Physics (Symposium) : 412-418. ScholarBank@NUS Repository. | Abstract: | The analysis of a kink, observed in the charge pumping current versus stress time curve, supports the recent claim of a new interface-trap generation mechanism during hot-carrier stress. The trap generation process, which relates to the interaction between hot carriers and the Si-SiO2 interface, proceeds with a generation coefficient higher than those of hot-hole or hot-electron injection. With its dominance in the late stage, it is likely to limit the lifetime of N-MOSFETs under ac operation. | Source Title: | Annual Proceedings - Reliability Physics (Symposium) | URI: | http://scholarbank.nus.edu.sg/handle/10635/84038 | ISSN: | 00999512 |
Appears in Collections: | Staff Publications |
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