On the dominant interface trap generation process during hot-carrier stressing

Abstract

The analysis of a kink, observed in the charge pumping current versus stress time curve, supports the recent claim of a new interface-trap generation mechanism during hot-carrier stress. The trap generation process, which relates to the interaction between hot carriers and the Si-SiO2 interface, proceeds with a generation coefficient higher than those of hot-hole or hot-electron injection. With its dominance in the late stage, it is likely to limit the lifetime of N-MOSFETs under ac operation.