Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/84038
Title: On the dominant interface trap generation process during hot-carrier stressing
Authors: Ang, D.S. 
Ling, C.H. 
Keywords: Ac stress
Charge pumping current
Hot carrier
Interface trap
Lightly doped drain
MOSFET
Issue Date: 2001
Source: Ang, D.S.,Ling, C.H. (2001). On the dominant interface trap generation process during hot-carrier stressing. Annual Proceedings - Reliability Physics (Symposium) : 412-418. ScholarBank@NUS Repository.
Abstract: The analysis of a kink, observed in the charge pumping current versus stress time curve, supports the recent claim of a new interface-trap generation mechanism during hot-carrier stress. The trap generation process, which relates to the interaction between hot carriers and the Si-SiO2 interface, proceeds with a generation coefficient higher than those of hot-hole or hot-electron injection. With its dominance in the late stage, it is likely to limit the lifetime of N-MOSFETs under ac operation.
Source Title: Annual Proceedings - Reliability Physics (Symposium)
URI: http://scholarbank.nus.edu.sg/handle/10635/84038
ISSN: 00999512
Appears in Collections:Staff Publications

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