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|Title:||Modeling the negative quadratic VCC of SiO2 in MIM capacitor||Authors:||Phung, T.H.
Negative quadratic VCC
Voltage coefficients of capacitance (VCC)
|Issue Date:||Dec-2011||Citation:||Phung, T.H., Steinmann, P., Wise, R., Yeo, Y.-C., Zhu, C. (2011-12). Modeling the negative quadratic VCC of SiO2 in MIM capacitor. IEEE Electron Device Letters 32 (12) : 1671-1673. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2011.2169038||Abstract:||The electrical performance of metal-insulator-metal capacitors with SiO2 thicknesses from 3 to 13 nm was investigated. The magnitude of the negative quadratic voltage coefficient of capacitance (VCC) of SiO 2 was found to be inversely proportional to the square of its thickness. A postdeposition anneal at 400°C reduced substantially. An equation based on the orientation polarization of the dipole moments in SiO 2 was derived, which fits the measured normalized capacitance density versus voltage across SiO2 very well. This suggests that the negative quadratic VCC of SiO2 is due to the orientation polarization. © 2006 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82713||ISSN:||07413106||DOI:||10.1109/LED.2011.2169038|
|Appears in Collections:||Staff Publications|
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