Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2011.2169038
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dc.titleModeling the negative quadratic VCC of SiO2 in MIM capacitor
dc.contributor.authorPhung, T.H.
dc.contributor.authorSteinmann, P.
dc.contributor.authorWise, R.
dc.contributor.authorYeo, Y.-C.
dc.contributor.authorZhu, C.
dc.date.accessioned2014-10-07T04:32:38Z
dc.date.available2014-10-07T04:32:38Z
dc.date.issued2011-12
dc.identifier.citationPhung, T.H., Steinmann, P., Wise, R., Yeo, Y.-C., Zhu, C. (2011-12). Modeling the negative quadratic VCC of SiO2 in MIM capacitor. IEEE Electron Device Letters 32 (12) : 1671-1673. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2011.2169038
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82713
dc.description.abstractThe electrical performance of metal-insulator-metal capacitors with SiO2 thicknesses from 3 to 13 nm was investigated. The magnitude of the negative quadratic voltage coefficient of capacitance (VCC) of SiO 2 was found to be inversely proportional to the square of its thickness. A postdeposition anneal at 400°C reduced substantially. An equation based on the orientation polarization of the dipole moments in SiO 2 was derived, which fits the measured normalized capacitance density versus voltage across SiO2 very well. This suggests that the negative quadratic VCC of SiO2 is due to the orientation polarization. © 2006 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2011.2169038
dc.sourceScopus
dc.subjectMIM capacitor
dc.subjectNegative quadratic VCC
dc.subjectOrientation polarization
dc.subjectSiO2
dc.subjectVoltage coefficients of capacitance (VCC)
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2011.2169038
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume32
dc.description.issue12
dc.description.page1671-1673
dc.description.codenEDLED
dc.identifier.isiut000297352500008
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