Modeling the negative quadratic VCC of SiO2 in MIM capacitor

Abstract

The electrical performance of metal-insulator-metal capacitors with SiO2 thicknesses from 3 to 13 nm was investigated. The magnitude of the negative quadratic voltage coefficient of capacitance (VCC) of SiO 2 was found to be inversely proportional to the square of its thickness. A postdeposition anneal at 400°C reduced substantially. An equation based on the orientation polarization of the dipole moments in SiO 2 was derived, which fits the measured normalized capacitance density versus voltage across SiO2 very well. This suggests that the negative quadratic VCC of SiO2 is due to the orientation polarization. © 2006 IEEE.