Please use this identifier to cite or link to this item:
|Title:||Modeling the negative quadratic VCC of SiO2 in MIM capacitor|
Negative quadratic VCC
Voltage coefficients of capacitance (VCC)
|Citation:||Phung, T.H., Steinmann, P., Wise, R., Yeo, Y.-C., Zhu, C. (2011-12). Modeling the negative quadratic VCC of SiO2 in MIM capacitor. IEEE Electron Device Letters 32 (12) : 1671-1673. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2011.2169038|
|Abstract:||The electrical performance of metal-insulator-metal capacitors with SiO2 thicknesses from 3 to 13 nm was investigated. The magnitude of the negative quadratic voltage coefficient of capacitance (VCC) of SiO 2 was found to be inversely proportional to the square of its thickness. A postdeposition anneal at 400°C reduced substantially. An equation based on the orientation polarization of the dipole moments in SiO 2 was derived, which fits the measured normalized capacitance density versus voltage across SiO2 very well. This suggests that the negative quadratic VCC of SiO2 is due to the orientation polarization. © 2006 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 17, 2018
WEB OF SCIENCETM
checked on Jun 26, 2018
checked on May 11, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.