Modeling the negative quadratic VCC of SiO2 in MIM capacitor

Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2011.2169038

Title:	Modeling the negative quadratic VCC of SiO2 in MIM capacitor
Authors:	Phung, T.H. Steinmann, P. Wise, R. Yeo, Y.-C. Zhu, C.
Keywords:	MIM capacitor Negative quadratic VCC Orientation polarization SiO2 Voltage coefficients of capacitance (VCC)
Issue Date:	Dec-2011
Citation:	Phung, T.H., Steinmann, P., Wise, R., Yeo, Y.-C., Zhu, C. (2011-12). Modeling the negative quadratic VCC of SiO2 in MIM capacitor. IEEE Electron Device Letters 32 (12) : 1671-1673. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2011.2169038
Abstract:	The electrical performance of metal-insulator-metal capacitors with SiO2 thicknesses from 3 to 13 nm was investigated. The magnitude of the negative quadratic voltage coefficient of capacitance (VCC) of SiO 2 was found to be inversely proportional to the square of its thickness. A postdeposition anneal at 400°C reduced substantially. An equation based on the orientation polarization of the dipole moments in SiO 2 was derived, which fits the measured normalized capacitance density versus voltage across SiO2 very well. This suggests that the negative quadratic VCC of SiO2 is due to the orientation polarization. © 2006 IEEE.
Source Title:	IEEE Electron Device Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/82713
ISSN:	07413106
DOI:	10.1109/LED.2011.2169038
Appears in Collections:	Staff Publications

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