Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors

Abstract

The electron mobility of ultrathin-body (UTB) metal-oxide semiconductor field-effect transistors (MOSFETs) with sub-10-nm-body thickness, T body, employing strained-Si and Ge was investigated. It was observed that for biaxial tensile strained-Si UTB MOSFETs, strain effects offered mobility enhancement down to a body thickness of 3 nm. In the case of Ge channel UTB MOSFETs, electron mobility was depended on surface orientation. The results show Ge〈100〉 and Ge〈110〉 suffer degradation in mobility due to low quantization masses at small T bidy.