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https://scholarbank.nus.edu.sg/handle/10635/81592
| Title: | New method for the localization of metallization defects using cathodoluminescence imaging | Authors: | Liu, X. Phang, J.C.H. Chan, D.S.H. Chim, W.K. |
Issue Date: | 1997 | Citation: | Liu, X.,Phang, J.C.H.,Chan, D.S.H.,Chim, W.K. (1997). New method for the localization of metallization defects using cathodoluminescence imaging. Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA : 264-269. ScholarBank@NUS Repository. | Abstract: | We report a new concept for the localization of metallization defects by using cathodoluminescence (CL) imaging. The CL image contrast, which is due to the difference in light reflection characteristics of the contact metal and substrate materials, is used for the localization of metallization defects. This method is applicable to devices with a luminescent passivation layer and a non-luminescent substrate. Experimental study of a silicon device with a passivation layer of Si3N4/a-SiO2 is reported. | Source Title: | Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA | URI: | http://scholarbank.nus.edu.sg/handle/10635/81592 |
| Appears in Collections: | Staff Publications |
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