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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/81592
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dc.titleNew method for the localization of metallization defects using cathodoluminescence imaging
dc.contributor.authorLiu, X.
dc.contributor.authorPhang, J.C.H.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorChim, W.K.
dc.date.accessioned2014-10-07T03:09:56Z
dc.date.available2014-10-07T03:09:56Z
dc.date.issued1997
dc.identifier.citationLiu, X.,Phang, J.C.H.,Chan, D.S.H.,Chim, W.K. (1997). New method for the localization of metallization defects using cathodoluminescence imaging. Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA : 264-269. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81592
dc.description.abstractWe report a new concept for the localization of metallization defects by using cathodoluminescence (CL) imaging. The CL image contrast, which is due to the difference in light reflection characteristics of the contact metal and substrate materials, is used for the localization of metallization defects. This method is applicable to devices with a luminescent passivation layer and a non-luminescent substrate. Experimental study of a silicon device with a passivation layer of Si3N4/a-SiO2 is reported.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleProceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA
dc.description.page264-269
dc.description.coden234
dc.identifier.isiutNOT_IN_WOS
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