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|Title:||Effect of micro-extraction field and physical dimensions on the charging dynamics of integrated circuit passivation layer probe-holes in the electron beam tester||Authors:||Sim, K.S.
|Issue Date:||Nov-1995||Citation:||Sim, K.S.,Phang, J.C.H.,Chan, D.S.H. (1995-11). Effect of micro-extraction field and physical dimensions on the charging dynamics of integrated circuit passivation layer probe-holes in the electron beam tester. Microelectronic Engineering 26 (3-4) : 155-166. ScholarBank@NUS Repository.||Abstract:||This paper presents numerical simulation results which show that the side-wall of a 1 μm deep probe-hole in the SiO2 passivation layer of an integrated circuit charges up severely when a 1 keV beam is probing a test point inside the probe hole. The rate of side-wall charging and the polarity of charge depend on the width of the probe-hole and the strength of the extraction field inside the probe-hole. The side-wall charges up positively when the extraction field inside the probe hole is equal to or greater than 20 V/μm and the width of the probe-hole equal to or greater than 1 μm. The side-wall charges up negatively under all other conditions. © 1995.||Source Title:||Microelectronic Engineering||URI:||http://scholarbank.nus.edu.sg/handle/10635/80367||ISSN:||01679317|
|Appears in Collections:||Staff Publications|
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