Effect of micro-extraction field and physical dimensions on the charging dynamics of integrated circuit passivation layer probe-holes in the electron beam tester

Abstract

This paper presents numerical simulation results which show that the side-wall of a 1 μm deep probe-hole in the SiO2 passivation layer of an integrated circuit charges up severely when a 1 keV beam is probing a test point inside the probe hole. The rate of side-wall charging and the polarity of charge depend on the width of the probe-hole and the strength of the extraction field inside the probe-hole. The side-wall charges up positively when the extraction field inside the probe hole is equal to or greater than 20 V/μm and the width of the probe-hole equal to or greater than 1 μm. The side-wall charges up negatively under all other conditions. © 1995.