Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80367
Title: Effect of micro-extraction field and physical dimensions on the charging dynamics of integrated circuit passivation layer probe-holes in the electron beam tester
Authors: Sim, K.S. 
Phang, J.C.H. 
Chan, D.S.H. 
Issue Date: Nov-1995
Source: Sim, K.S.,Phang, J.C.H.,Chan, D.S.H. (1995-11). Effect of micro-extraction field and physical dimensions on the charging dynamics of integrated circuit passivation layer probe-holes in the electron beam tester. Microelectronic Engineering 26 (3-4) : 155-166. ScholarBank@NUS Repository.
Abstract: This paper presents numerical simulation results which show that the side-wall of a 1 μm deep probe-hole in the SiO2 passivation layer of an integrated circuit charges up severely when a 1 keV beam is probing a test point inside the probe hole. The rate of side-wall charging and the polarity of charge depend on the width of the probe-hole and the strength of the extraction field inside the probe-hole. The side-wall charges up positively when the extraction field inside the probe hole is equal to or greater than 20 V/μm and the width of the probe-hole equal to or greater than 1 μm. The side-wall charges up negatively under all other conditions. © 1995.
Source Title: Microelectronic Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/80367
ISSN: 01679317
Appears in Collections:Staff Publications

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