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|Title:||New spectroscopic photon emission microscope system for semiconductor device analysis||Authors:||Liu, Y.Y.
|Issue Date:||1995||Citation:||Liu, Y.Y.,Tao, J.M.,Chan, D.S.H.,Phang, J.C.H.,Chim, W.K. (1995). New spectroscopic photon emission microscope system for semiconductor device analysis. Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA : 60-65. ScholarBank@NUS Repository.||Abstract:||This paper describes the design and performance of a new spectroscopic photon emission microscope system (SPEMS) with panchromatic imaging and continuous wavelength spectroscopic capabilities. Very low levels of light emissions from biased devices can be detected and high resolution spectral characteristics can be analysed because of the highly efficient light collection and transmission optics. Results shown include that of MOS transistors biased in saturation, forward and reverse biased pn junctions and oxide leakage. The potential use of the 'defect finger-printing' technique, whereby a unique spectral signature is assigned to each failure mechanism, is also discussed.||Source Title:||Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA||URI:||http://scholarbank.nus.edu.sg/handle/10635/72797|
|Appears in Collections:||Staff Publications|
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