Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jprocont.2007.11.009
Title: Critical dimension and real-time temperature control for warped wafers
Authors: Ho, W.K. 
Tay, A. 
Fu, J. 
Chen, M.
Feng, Y.
Keywords: Critical dimension
Lithography
Real-time control
Wafer warpage
Issue Date: Dec-2008
Citation: Ho, W.K., Tay, A., Fu, J., Chen, M., Feng, Y. (2008-12). Critical dimension and real-time temperature control for warped wafers. Journal of Process Control 18 (10) : 916-921. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jprocont.2007.11.009
Abstract: In this paper, we present the experimental results on critical dimension (CD) control via real-time temperature control for warped wafers. As opposed to run-to-run control where information from the previous wafer or batch is used for control of the current wafer or batch, the approach here is real-time and make use of current information for control of the current wafer CD. In this paper we demonstrate that real-time control of the post-exposure bake temperature to give nonuniform temperature distribution across the warped wafer can reduce CD nonuniformity across the wafer. © 2007 Elsevier Ltd. All rights reserved.
Source Title: Journal of Process Control
URI: http://scholarbank.nus.edu.sg/handle/10635/55471
ISSN: 09591524
DOI: 10.1016/j.jprocont.2007.11.009
Appears in Collections:Staff Publications

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