Please use this identifier to cite or link to this item: https://doi.org/10.1039/D3NH00524K
Title: Physical reservoirs based on MoS2–HZO integrated ferroelectric field-effect transistors for reservoir computing systems
Authors: Lingqi Li
Heng Xiang 
Haofei Zheng
Yu-Chieh Chien 
Ngoc Thanh Duong 
Jing Gao 
Kah Wee Ang 
Issue Date: 11-Mar-2024
Citation: Lingqi Li, Heng Xiang, Haofei Zheng, Yu-Chieh Chien, Ngoc Thanh Duong, Jing Gao, Kah Wee Ang (2024-03-11). Physical reservoirs based on MoS2–HZO integrated ferroelectric field-effect transistors for reservoir computing systems. Nanoscale Horizons. ScholarBank@NUS Repository. https://doi.org/10.1039/D3NH00524K
Rights: Attribution-NonCommercial-NoDerivatives 4.0 International
Source Title: Nanoscale Horizons
URI: https://scholarbank.nus.edu.sg/handle/10635/248338
DOI: 10.1039/D3NH00524K
Rights: Attribution-NonCommercial-NoDerivatives 4.0 International
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