Physical reservoirs based on MoS2–HZO integrated ferroelectric field-effect transistors for reservoir computing systems

Please use this identifier to cite or link to this item: https://doi.org/10.1039/D3NH00524K

DC Field	Value
dc.title	Physical reservoirs based on MoS2–HZO integrated ferroelectric field-effect transistors for reservoir computing systems
dc.contributor.author	Lingqi Li
dc.contributor.author	Heng Xiang
dc.contributor.author	Haofei Zheng
dc.contributor.author	Yu-Chieh Chien
dc.contributor.author	Ngoc Thanh Duong
dc.contributor.author	Jing Gao
dc.contributor.author	Kah Wee Ang
dc.date.accessioned	2024-05-08T08:24:37Z
dc.date.available	2024-05-08T08:24:37Z
dc.date.issued	2024-03-11
dc.identifier.citation	Lingqi Li, Heng Xiang, Haofei Zheng, Yu-Chieh Chien, Ngoc Thanh Duong, Jing Gao, Kah Wee Ang (2024-03-11). Physical reservoirs based on MoS2–HZO integrated ferroelectric field-effect transistors for reservoir computing systems. Nanoscale Horizons. ScholarBank@NUS Repository. https://doi.org/10.1039/D3NH00524K
dc.identifier.uri	https://scholarbank.nus.edu.sg/handle/10635/248338
dc.language.iso	en
dc.rights	Attribution-NonCommercial-NoDerivatives 4.0 International
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.type	Article
dc.contributor.department	ELECTRICAL AND COMPUTER ENGINEERING
dc.description.doi	10.1039/D3NH00524K
dc.description.sourcetitle	Nanoscale Horizons
dc.published.state	Published
Appears in Collections:	Staff Publications Elements Students Publications

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