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Title: Efficient Surface Plasmon Polariton Excitation and Control over Outcoupling Mechanisms in Metal–Insulator–Metal Tunneling Junctions
Authors: Ksenia S. Makarenko 
Thanh Xuan Hoang
Thorin J. Duffin 
Andreea Radulescu
Henri J. Lezec
Hong‐Son Chu
Keywords: inelastic electron tunneling
light emission
surface plasmon polaritons
tunnel junctions
Issue Date: 22-Feb-2020
Publisher: John Wiley and Sons Inc.
Citation: Ksenia S. Makarenko, Thanh Xuan Hoang, Thorin J. Duffin, Andreea Radulescu, VIJITH KALATHINGAL, Henri J. Lezec, Hong‐Son Chu, NIJHUIS,CHRISTIAN ALBERTUS (2020-02-22). Efficient Surface Plasmon Polariton Excitation and Control over Outcoupling Mechanisms in Metal–Insulator–Metal Tunneling Junctions. Advanced Science 7 (8) : 1900291. ScholarBank@NUS Repository.
Abstract: Surface plasmon polaritons (SPPs) are viable candidates for integration into on-chip nano-circuitry that allow access to high data bandwidths and low energy consumption. Metal-insulator-metal tunneling junctions (MIM-TJs) have recently been shown to excite and detect SPPs electrically; however, experimentally measured efficiencies and outcoupling mechanisms are not fully understood. It is shown that the MIM-TJ cavity SPP mode (MIM-SPP) can outcouple via three pathways to i) photons via scattering of MIM-SPP at the MIM-TJ interfaces, ii) SPPs at the metal-dielectric interfaces (bound-SPPs) by mode coupling through the electrodes, and iii) photons and bound-SPP modes by mode coupling at the MIM-TJ edges. It is also shown that, for Al-AlOx-Cr-Au MIM-TJs on glass, the MIM-SPP mode outcouples efficiently to bound-SPPs through either electrode (pathway 2); this outcoupling pathway can be selectively turned on and off by changing the respective electrode thickness. Outcoupling at the MIM-TJ edges (pathway 3) is efficient and sensitive to the edge topography, whereas most light emission originates from roughness-induced scattering of the MIM-SPP mode (pathway 1). Using an arbitrary roughness profile, it is demonstrated that various roughness facets can raise MIM-SPP outcoupling efficiencies to 0.62%. These results pave the way for understanding the topographical parameters needed to develop CMOS-compatible plasmonic circuitry elements.
Source Title: Advanced Science
ISSN: 21983844
DOI: 10.1002/advs.201900291
Appears in Collections:Staff Publications

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