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|Title:||Efficient Surface Plasmon Polariton Excitation and Control over Outcoupling Mechanisms in Metal–Insulator–Metal Tunneling Junctions||Authors:||Ksenia S. Makarenko
Thanh Xuan Hoang
Thorin J. Duffin
Henri J. Lezec
|Keywords:||inelastic electron tunneling
surface plasmon polaritons
|Issue Date:||22-Feb-2020||Publisher:||John Wiley and Sons Inc.||Citation:||Ksenia S. Makarenko, Thanh Xuan Hoang, Thorin J. Duffin, Andreea Radulescu, VIJITH KALATHINGAL, Henri J. Lezec, Hong‐Son Chu, NIJHUIS,CHRISTIAN ALBERTUS (2020-02-22). Efficient Surface Plasmon Polariton Excitation and Control over Outcoupling Mechanisms in Metal–Insulator–Metal Tunneling Junctions. Advanced Science 7 (8) : 1900291. ScholarBank@NUS Repository. https://doi.org/10.1002/advs.201900291||Abstract:||Surface plasmon polaritons (SPPs) are viable candidates for integration into on-chip nano-circuitry that allow access to high data bandwidths and low energy consumption. Metal-insulator-metal tunneling junctions (MIM-TJs) have recently been shown to excite and detect SPPs electrically; however, experimentally measured efficiencies and outcoupling mechanisms are not fully understood. It is shown that the MIM-TJ cavity SPP mode (MIM-SPP) can outcouple via three pathways to i) photons via scattering of MIM-SPP at the MIM-TJ interfaces, ii) SPPs at the metal-dielectric interfaces (bound-SPPs) by mode coupling through the electrodes, and iii) photons and bound-SPP modes by mode coupling at the MIM-TJ edges. It is also shown that, for Al-AlOx-Cr-Au MIM-TJs on glass, the MIM-SPP mode outcouples efficiently to bound-SPPs through either electrode (pathway 2); this outcoupling pathway can be selectively turned on and off by changing the respective electrode thickness. Outcoupling at the MIM-TJ edges (pathway 3) is efficient and sensitive to the edge topography, whereas most light emission originates from roughness-induced scattering of the MIM-SPP mode (pathway 1). Using an arbitrary roughness profile, it is demonstrated that various roughness facets can raise MIM-SPP outcoupling efficiencies to 0.62%. These results pave the way for understanding the topographical parameters needed to develop CMOS-compatible plasmonic circuitry elements.||Source Title:||Advanced Science||URI:||https://scholarbank.nus.edu.sg/handle/10635/191231||ISSN:||21983844||DOI:||10.1002/advs.201900291|
|Appears in Collections:||Staff Publications|
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