Please use this identifier to cite or link to this item: https://doi.org/10.1002/aelm.202000760
Title: An electronic synapse based on two dimensional ferroelectric CuInP2S6
Authors: LI BOCHANG 
Sifan Li
WANG HAN 
Li Chen,
LIU LIANG 
FENG XUEWEI 
LI YESHENG 
CHEN JINGSHENG 
ANG KAH WEE 
Keywords: 2D materials
CuInP2S6
electronic synapses
ferroelectric diodes
Issue Date: 9-Nov-2020
Publisher: WILEY
Citation: LI BOCHANG, Sifan Li, WANG HAN, Li Chen,, LIU LIANG, FENG XUEWEI, LI YESHENG, CHEN JINGSHENG, ANG KAH WEE (2020-11-09). An electronic synapse based on two dimensional ferroelectric CuInP2S6. Advanced Electronic Materials 6 (12) : 2000760. ScholarBank@NUS Repository. https://doi.org/10.1002/aelm.202000760
Abstract: Memristors with biological synaptic behaviors and functions have been intensively studied as an important component for neuromorphic computing system, which hold promise to address the power consumption issue in modern computers based on von Neumann architecture. However, the resistive switching mechanism that relies on the stochastic formation of conductive filaments leads to poor cycle-to-cycle (temporal) and cell-to-cell (spatial) variations for filamentary memristors. The emergence of memristors based on 2D ferroelectric materials can potentially avoid these issues. Here, a vertical Au/CuInP2S6 (CIPS)/Ti diode is demonstrated using exfoliated ferroelectric CIPS flake. Through ferroelectric switching, the CIPS diode realizes resistive switching with a ratio larger than 6 × 103. The endurance measurement shows a small set and reset voltage variation of 5.3% and 9.1%, respectively. Key synaptic behaviors including spike-time-dependent plasticity, paired-pulse-facilitation, and paired-pulse-depression are successfully mimicked, manifesting the potential application of CIPS diode in a neuromorphic computing system. Moreover, pattern learning and memory behaviors are emulated using a 3 × 3 CIPS crossbar array.
Source Title: Advanced Electronic Materials
URI: https://scholarbank.nus.edu.sg/handle/10635/190240
ISSN: 2199-160X
DOI: 10.1002/aelm.202000760
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