Please use this identifier to cite or link to this item: https://doi.org/10.1002/aelm.202000760
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dc.titleAn electronic synapse based on two dimensional ferroelectric CuInP2S6
dc.contributor.authorLI BOCHANG
dc.contributor.authorSifan Li
dc.contributor.authorWANG HAN
dc.contributor.authorLi Chen,
dc.contributor.authorLIU LIANG
dc.contributor.authorFENG XUEWEI
dc.contributor.authorLI YESHENG
dc.contributor.authorCHEN JINGSHENG
dc.contributor.authorANG KAH WEE
dc.date.accessioned2021-04-26T07:58:33Z
dc.date.available2021-04-26T07:58:33Z
dc.date.issued2020-11-09
dc.identifier.citationLI BOCHANG, Sifan Li, WANG HAN, Li Chen,, LIU LIANG, FENG XUEWEI, LI YESHENG, CHEN JINGSHENG, ANG KAH WEE (2020-11-09). An electronic synapse based on two dimensional ferroelectric CuInP2S6. Advanced Electronic Materials 6 (12) : 2000760. ScholarBank@NUS Repository. https://doi.org/10.1002/aelm.202000760
dc.identifier.issn2199-160X
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/190240
dc.description.abstractMemristors with biological synaptic behaviors and functions have been intensively studied as an important component for neuromorphic computing system, which hold promise to address the power consumption issue in modern computers based on von Neumann architecture. However, the resistive switching mechanism that relies on the stochastic formation of conductive filaments leads to poor cycle-to-cycle (temporal) and cell-to-cell (spatial) variations for filamentary memristors. The emergence of memristors based on 2D ferroelectric materials can potentially avoid these issues. Here, a vertical Au/CuInP2S6 (CIPS)/Ti diode is demonstrated using exfoliated ferroelectric CIPS flake. Through ferroelectric switching, the CIPS diode realizes resistive switching with a ratio larger than 6 × 103. The endurance measurement shows a small set and reset voltage variation of 5.3% and 9.1%, respectively. Key synaptic behaviors including spike-time-dependent plasticity, paired-pulse-facilitation, and paired-pulse-depression are successfully mimicked, manifesting the potential application of CIPS diode in a neuromorphic computing system. Moreover, pattern learning and memory behaviors are emulated using a 3 × 3 CIPS crossbar array.
dc.description.urihttps://onlinelibrary.wiley.com/doi/10.1002/aelm.202000760
dc.language.isoen
dc.publisherWILEY
dc.subject2D materials
dc.subjectCuInP2S6
dc.subjectelectronic synapses
dc.subjectferroelectric diodes
dc.typeArticle
dc.contributor.departmentDEPT OF ELECTRICAL & COMPUTER ENGG
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1002/aelm.202000760
dc.description.sourcetitleAdvanced Electronic Materials
dc.description.volume6
dc.description.issue12
dc.description.page2000760
dc.published.statePublished
dc.grant.idA2083c0061
dc.grant.idNRF-CRP22-2019-0007
dc.grant.fundingagencyA*STAR Science and Engineering Research Council
dc.grant.fundingagencyNational Research Foundation, Singapore
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