Please use this identifier to cite or link to this item: https://doi.org/10.1002/aelm.202000617
Title: Solution Processable High Performance Multiwall Carbon Nanotube-Si Heterojunctions
Authors: Dwivedi, Neeraj 
Dhand, Chetna
Anderson, Erik C
Kumar, Rajeev
Liao, Baochen 
Yeo, Reuben J
Khan, Raju
Carey, J David
Saifullah, Mohammad SM
Kumar, Sushil
Malik, Hitendra K
Hashmi, SAR
Srivastava, Avanish K
Sankaranarayanan, Subramanian KRS
Stangl, Rolf 
Duttagupta, Shubham 
Keywords: Science & Technology
Technology
Physical Sciences
Nanoscience & Nanotechnology
Materials Science, Multidisciplinary
Physics, Applied
Science & Technology - Other Topics
Materials Science
Physics
electrical transport
heterojunctions
MWCNTs
ELECTRICAL-PROPERTIES
SOLAR-CELLS
ELECTROPHORETIC DEPOSITION
SURFACE-STATES
WORK FUNCTION
THIN-FILMS
GROWTH
GRAPHENE
FABRICATION
COMPOSITES
Issue Date: 8-Oct-2020
Publisher: WILEY
Citation: Dwivedi, Neeraj, Dhand, Chetna, Anderson, Erik C, Kumar, Rajeev, Liao, Baochen, Yeo, Reuben J, Khan, Raju, Carey, J David, Saifullah, Mohammad SM, Kumar, Sushil, Malik, Hitendra K, Hashmi, SAR, Srivastava, Avanish K, Sankaranarayanan, Subramanian KRS, Stangl, Rolf, Duttagupta, Shubham (2020-10-08). Solution Processable High Performance Multiwall Carbon Nanotube-Si Heterojunctions. ADVANCED ELECTRONIC MATERIALS 6 (11). ScholarBank@NUS Repository. https://doi.org/10.1002/aelm.202000617
Abstract: © 2020 Wiley-VCH GmbH Carbon nanotube (CNT)–silicon (Si) heterojunctions show exceptional electrical behavior and hence are promising for electronic and optoelectronic applications. In particular, single wall CNTs (SWCNTs)–Si heterojunctions have been widely studied for these applications. Since multiwall CNTs (MWCNTs) have higher electrical conductivity than SWCNTs, engineering the properties of MWCNTs so as to tailor their electrical properties suitable for heterojunctions can boost the performance of CNT-based electronic and optoelectronic devices. Here the development of MWCNT-Si heterostructures is reported, following surface functionalization and silanization to tailor their structure and properties, at room temperature via solution processing. The developed Al/n-Si/MWCNT/Al heterojunction devices show a low turn-on voltage (≈1–3 V) and high current (≈0.8 mA at 10 V) exceeding the previous high temperature processed CNT-based heterojunctions as well as room temperature grown additional amorphous carbon–Si heterojunctions. The carrier transport mechanism within a carrier-selective contact, multijunction, multiresistance framework, with device current–voltage behavior dictated by transport across the heterojunction and quantum tunneling is discussed. This work opens new direction to design improved devices for future development of large area solution processable CNT based electronics.
Source Title: ADVANCED ELECTRONIC MATERIALS
URI: https://scholarbank.nus.edu.sg/handle/10635/184500
ISSN: 2199160X
DOI: 10.1002/aelm.202000617
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