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https://doi.org/10.1002/aelm.202000617
Title: | Solution Processable High Performance Multiwall Carbon Nanotube-Si Heterojunctions | Authors: | Dwivedi, Neeraj Dhand, Chetna Anderson, Erik C Kumar, Rajeev Liao, Baochen Yeo, Reuben J Khan, Raju Carey, J David Saifullah, Mohammad SM Kumar, Sushil Malik, Hitendra K Hashmi, SAR Srivastava, Avanish K Sankaranarayanan, Subramanian KRS Stangl, Rolf Duttagupta, Shubham |
Keywords: | Science & Technology Technology Physical Sciences Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics electrical transport heterojunctions MWCNTs ELECTRICAL-PROPERTIES SOLAR-CELLS ELECTROPHORETIC DEPOSITION SURFACE-STATES WORK FUNCTION THIN-FILMS GROWTH GRAPHENE FABRICATION COMPOSITES |
Issue Date: | 8-Oct-2020 | Publisher: | WILEY | Citation: | Dwivedi, Neeraj, Dhand, Chetna, Anderson, Erik C, Kumar, Rajeev, Liao, Baochen, Yeo, Reuben J, Khan, Raju, Carey, J David, Saifullah, Mohammad SM, Kumar, Sushil, Malik, Hitendra K, Hashmi, SAR, Srivastava, Avanish K, Sankaranarayanan, Subramanian KRS, Stangl, Rolf, Duttagupta, Shubham (2020-10-08). Solution Processable High Performance Multiwall Carbon Nanotube-Si Heterojunctions. ADVANCED ELECTRONIC MATERIALS 6 (11). ScholarBank@NUS Repository. https://doi.org/10.1002/aelm.202000617 | Abstract: | © 2020 Wiley-VCH GmbH Carbon nanotube (CNT)–silicon (Si) heterojunctions show exceptional electrical behavior and hence are promising for electronic and optoelectronic applications. In particular, single wall CNTs (SWCNTs)–Si heterojunctions have been widely studied for these applications. Since multiwall CNTs (MWCNTs) have higher electrical conductivity than SWCNTs, engineering the properties of MWCNTs so as to tailor their electrical properties suitable for heterojunctions can boost the performance of CNT-based electronic and optoelectronic devices. Here the development of MWCNT-Si heterostructures is reported, following surface functionalization and silanization to tailor their structure and properties, at room temperature via solution processing. The developed Al/n-Si/MWCNT/Al heterojunction devices show a low turn-on voltage (≈1–3 V) and high current (≈0.8 mA at 10 V) exceeding the previous high temperature processed CNT-based heterojunctions as well as room temperature grown additional amorphous carbon–Si heterojunctions. The carrier transport mechanism within a carrier-selective contact, multijunction, multiresistance framework, with device current–voltage behavior dictated by transport across the heterojunction and quantum tunneling is discussed. This work opens new direction to design improved devices for future development of large area solution processable CNT based electronics. | Source Title: | ADVANCED ELECTRONIC MATERIALS | URI: | https://scholarbank.nus.edu.sg/handle/10635/184500 | ISSN: | 2199160X | DOI: | 10.1002/aelm.202000617 |
Appears in Collections: | Elements Staff Publications |
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Complete Manuscript_RRRR_Non Highlighted.docx | Accepted version | 18.51 MB | Microsoft Word XML | OPEN | Post-print | View/Download |
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