Please use this identifier to cite or link to this item: https://doi.org/10.1002/aelm.202000617
DC FieldValue
dc.titleSolution Processable High Performance Multiwall Carbon Nanotube-Si Heterojunctions
dc.contributor.authorDwivedi, Neeraj
dc.contributor.authorDhand, Chetna
dc.contributor.authorAnderson, Erik C
dc.contributor.authorKumar, Rajeev
dc.contributor.authorLiao, Baochen
dc.contributor.authorYeo, Reuben J
dc.contributor.authorKhan, Raju
dc.contributor.authorCarey, J David
dc.contributor.authorSaifullah, Mohammad SM
dc.contributor.authorKumar, Sushil
dc.contributor.authorMalik, Hitendra K
dc.contributor.authorHashmi, SAR
dc.contributor.authorSrivastava, Avanish K
dc.contributor.authorSankaranarayanan, Subramanian KRS
dc.contributor.authorStangl, Rolf
dc.contributor.authorDuttagupta, Shubham
dc.date.accessioned2020-12-03T06:08:45Z
dc.date.available2020-12-03T06:08:45Z
dc.date.issued2020-10-08
dc.identifier.citationDwivedi, Neeraj, Dhand, Chetna, Anderson, Erik C, Kumar, Rajeev, Liao, Baochen, Yeo, Reuben J, Khan, Raju, Carey, J David, Saifullah, Mohammad SM, Kumar, Sushil, Malik, Hitendra K, Hashmi, SAR, Srivastava, Avanish K, Sankaranarayanan, Subramanian KRS, Stangl, Rolf, Duttagupta, Shubham (2020-10-08). Solution Processable High Performance Multiwall Carbon Nanotube-Si Heterojunctions. ADVANCED ELECTRONIC MATERIALS 6 (11). ScholarBank@NUS Repository. https://doi.org/10.1002/aelm.202000617
dc.identifier.issn2199160X
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/184500
dc.description.abstract© 2020 Wiley-VCH GmbH Carbon nanotube (CNT)–silicon (Si) heterojunctions show exceptional electrical behavior and hence are promising for electronic and optoelectronic applications. In particular, single wall CNTs (SWCNTs)–Si heterojunctions have been widely studied for these applications. Since multiwall CNTs (MWCNTs) have higher electrical conductivity than SWCNTs, engineering the properties of MWCNTs so as to tailor their electrical properties suitable for heterojunctions can boost the performance of CNT-based electronic and optoelectronic devices. Here the development of MWCNT-Si heterostructures is reported, following surface functionalization and silanization to tailor their structure and properties, at room temperature via solution processing. The developed Al/n-Si/MWCNT/Al heterojunction devices show a low turn-on voltage (≈1–3 V) and high current (≈0.8 mA at 10 V) exceeding the previous high temperature processed CNT-based heterojunctions as well as room temperature grown additional amorphous carbon–Si heterojunctions. The carrier transport mechanism within a carrier-selective contact, multijunction, multiresistance framework, with device current–voltage behavior dictated by transport across the heterojunction and quantum tunneling is discussed. This work opens new direction to design improved devices for future development of large area solution processable CNT based electronics.
dc.language.isoen
dc.publisherWILEY
dc.sourceElements
dc.subjectScience & Technology
dc.subjectTechnology
dc.subjectPhysical Sciences
dc.subjectNanoscience & Nanotechnology
dc.subjectMaterials Science, Multidisciplinary
dc.subjectPhysics, Applied
dc.subjectScience & Technology - Other Topics
dc.subjectMaterials Science
dc.subjectPhysics
dc.subjectelectrical transport
dc.subjectheterojunctions
dc.subjectMWCNTs
dc.subjectELECTRICAL-PROPERTIES
dc.subjectSOLAR-CELLS
dc.subjectELECTROPHORETIC DEPOSITION
dc.subjectSURFACE-STATES
dc.subjectWORK FUNCTION
dc.subjectTHIN-FILMS
dc.subjectGROWTH
dc.subjectGRAPHENE
dc.subjectFABRICATION
dc.subjectCOMPOSITES
dc.typeArticle
dc.date.updated2020-12-03T05:26:53Z
dc.contributor.departmentSOLAR ENERGY RESEARCH INST OF S'PORE
dc.description.doi10.1002/aelm.202000617
dc.description.sourcetitleADVANCED ELECTRONIC MATERIALS
dc.description.volume6
dc.description.issue11
dc.published.statePublished
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