Please use this identifier to cite or link to this item: https://doi.org/10.1109/VLSIT.2018.8510658
Title: Integration of 2D Black Phosphorus Phototransistor and Silicon Photonics Waveguide System Towards Mid-Infrared On-Chip Sensing Applications
Authors: HUANG LI 
DONG BOWEI 
Guo, Xin
CHANG YUHUA 
CHEN CHI-NAN 
HUANG XIN 
Wang, Hong
LEE CHENGKUO 
ANG KAH WEE 
Issue Date: 25-Oct-2018
Publisher: Institute of Electrical and Electronics Engineers Inc.
Citation: HUANG LI, DONG BOWEI, Guo, Xin, CHANG YUHUA, CHEN CHI-NAN, HUANG XIN, Wang, Hong, LEE CHENGKUO, ANG KAH WEE (2018-10-25). Integration of 2D Black Phosphorus Phototransistor and Silicon Photonics Waveguide System Towards Mid-Infrared On-Chip Sensing Applications. Digest of Technical Papers - Symposium on VLSI Technology : 161-162. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSIT.2018.8510658
Abstract: We demonstrate the first black phosphorus phototransistor integrated with Si photonics waveguide system towards mid-infrared (MIR) sensing. At a wavelength of 3.78 μm, the black phosphorus phototransistor achieves a high responsivity of 0.7 A/W under a small drain bias of-1 V at room-temperature. Additionally, the device offers gate and drain bias tunability to suppress dark current while simultaneously optimize photo-response performance. Our results reveal the potential of black phosphorus for MIR detection to enable the realization of integrated on-chip systems for MIR sensing applications.
Source Title: Digest of Technical Papers - Symposium on VLSI Technology
URI: https://scholarbank.nus.edu.sg/handle/10635/184402
ISBN: 9781538642160
ISSN: 0743-1562
DOI: 10.1109/VLSIT.2018.8510658
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