Please use this identifier to cite or link to this item: https://doi.org/10.1109/JPHOTOV.2017.2762587
Title: Investigation of Potential-Induced Degradation in n-PERT Bifacial Silicon Photovoltaic Modules with a Glass/Glass Structure
Authors: LUO WEI 
KHOO YONG SHENG 
JAI PRAKASH 
JOHNSON KAI CHI WONG 
WANG YAN 
ABERLE,ARMIN GERHARD 
SEERAM RAMAKRISHNA 
Keywords: Science & Technology
Technology
Physical Sciences
Energy & Fuels
Materials Science, Multidisciplinary
Physics, Applied
Materials Science
Physics
Encapsulation materials
glass/glass modules
n-type passivated emitter
rear totally diffused (n-PERT) bifacial silicon solar cells
potential-induced degradation (PID)
photovoltaic (PV) module reliability
STACKING-FAULTS
SOLAR-CELLS
EXPLANATION
VOLTAGE
FRONT
Issue Date: 1-Jan-2018
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation: LUO WEI, KHOO YONG SHENG, JAI PRAKASH, JOHNSON KAI CHI WONG, WANG YAN, ABERLE,ARMIN GERHARD, SEERAM RAMAKRISHNA (2018-01-01). Investigation of Potential-Induced Degradation in n-PERT Bifacial Silicon Photovoltaic Modules with a Glass/Glass Structure. IEEE JOURNAL OF PHOTOVOLTAICS 8 (1) : 16-22. ScholarBank@NUS Repository. https://doi.org/10.1109/JPHOTOV.2017.2762587
Abstract: © 2017 IEEE. Potential-induced degradation (PID) in n-type passivated emitter, rear totally diffused (n-PERT) bifacial crystalline silicon photovoltaic modules with a glass/glass structure is investigated. From front-side measurements, a significant loss in the short-circuit current (Isc ) and a relatively smaller loss in the opencircuit voltage (Voc ) and fill factor (FF) are observed due to PID. A similar degradation behavior is observed from the rear side, except that there is negligible change in Isc . External quantum efficiency and photoluminescence measurements reveal that the losses in Isc and Voc are most likely due to an increase in the front surface recombination. FF loss analysis and two-diode model fitting demonstrate that the FF loss is mainly attributed to an increased recombination in the space charge regions. Moreover, n-PERT bifacial silicon modules also suffer from PID when they are stressed from the rear side. Furthermore, some ethylene-vinyl acetate and polyolefin, which show high PID-resistance to conventional p-type technologies, are found to be not as effective in preventing PID in n-PERT technologies. However, a PID-free n-PERT bifacial module design is possible with the application of the sodium-free glass. Finally, the progression of PID is heavily dependent on the bias voltage and stress temperature.
Source Title: IEEE JOURNAL OF PHOTOVOLTAICS
URI: https://scholarbank.nus.edu.sg/handle/10635/176844
ISSN: 2156-3381
2156-3403
DOI: 10.1109/JPHOTOV.2017.2762587
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