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https://doi.org/10.1109/JPHOTOV.2017.2762587
Title: | Investigation of Potential-Induced Degradation in n-PERT Bifacial Silicon Photovoltaic Modules with a Glass/Glass Structure | Authors: | LUO WEI KHOO YONG SHENG JAI PRAKASH JOHNSON KAI CHI WONG WANG YAN ABERLE,ARMIN GERHARD SEERAM RAMAKRISHNA |
Keywords: | Science & Technology Technology Physical Sciences Energy & Fuels Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Encapsulation materials glass/glass modules n-type passivated emitter rear totally diffused (n-PERT) bifacial silicon solar cells potential-induced degradation (PID) photovoltaic (PV) module reliability STACKING-FAULTS SOLAR-CELLS EXPLANATION VOLTAGE FRONT |
Issue Date: | 1-Jan-2018 | Publisher: | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | Citation: | LUO WEI, KHOO YONG SHENG, JAI PRAKASH, JOHNSON KAI CHI WONG, WANG YAN, ABERLE,ARMIN GERHARD, SEERAM RAMAKRISHNA (2018-01-01). Investigation of Potential-Induced Degradation in n-PERT Bifacial Silicon Photovoltaic Modules with a Glass/Glass Structure. IEEE JOURNAL OF PHOTOVOLTAICS 8 (1) : 16-22. ScholarBank@NUS Repository. https://doi.org/10.1109/JPHOTOV.2017.2762587 | Abstract: | © 2017 IEEE. Potential-induced degradation (PID) in n-type passivated emitter, rear totally diffused (n-PERT) bifacial crystalline silicon photovoltaic modules with a glass/glass structure is investigated. From front-side measurements, a significant loss in the short-circuit current (Isc ) and a relatively smaller loss in the opencircuit voltage (Voc ) and fill factor (FF) are observed due to PID. A similar degradation behavior is observed from the rear side, except that there is negligible change in Isc . External quantum efficiency and photoluminescence measurements reveal that the losses in Isc and Voc are most likely due to an increase in the front surface recombination. FF loss analysis and two-diode model fitting demonstrate that the FF loss is mainly attributed to an increased recombination in the space charge regions. Moreover, n-PERT bifacial silicon modules also suffer from PID when they are stressed from the rear side. Furthermore, some ethylene-vinyl acetate and polyolefin, which show high PID-resistance to conventional p-type technologies, are found to be not as effective in preventing PID in n-PERT technologies. However, a PID-free n-PERT bifacial module design is possible with the application of the sodium-free glass. Finally, the progression of PID is heavily dependent on the bias voltage and stress temperature. | Source Title: | IEEE JOURNAL OF PHOTOVOLTAICS | URI: | https://scholarbank.nus.edu.sg/handle/10635/176844 | ISSN: | 2156-3381 2156-3403 |
DOI: | 10.1109/JPHOTOV.2017.2762587 |
Appears in Collections: | Staff Publications Elements |
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