Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.solmat.2019.02.038
Title: Investigation of polysilicon passivated contact's resilience to potential-induced degradation
Authors: LUO WEI 
CHEN NING 
KE CANGMING 
WANG YAN 
ABERLE,ARMIN GERHARD 
SEERAM RAMAKRISHNA 
SHUBHAM DUTTAGUPTA 
KHOO YONG SHENG 
Keywords: Science & Technology
Technology
Physical Sciences
Energy & Fuels
Materials Science, Multidisciplinary
Physics, Applied
Materials Science
Physics
PV module reliability
Potential-induced degradation (PID)
Polysilicon-based passivated contact
Surface polarization effect
PID recovery
PID solution
SILICON SOLAR-CELLS
PHOTOVOLTAIC MODULES
EXPLANATION
EMITTER
Issue Date: 15-Jun-2019
Publisher: ELSEVIER SCIENCE BV
Citation: LUO WEI, CHEN NING, KE CANGMING, WANG YAN, ABERLE,ARMIN GERHARD, SEERAM RAMAKRISHNA, SHUBHAM DUTTAGUPTA, KHOO YONG SHENG (2019-06-15). Investigation of polysilicon passivated contact's resilience to potential-induced degradation. SOLAR ENERGY MATERIALS AND SOLAR CELLS 195 : 168-173. ScholarBank@NUS Repository. https://doi.org/10.1016/j.solmat.2019.02.038
Abstract: © 2019 Elsevier B.V. We present clear evidence of excellent resilience to potential-induced degradation (PID) from polysilicon passivated contacts implemented on the rear of n-type solar cells. Under the stress conditions of −1000 V, 50 °C, 30% relative humidity with aluminum foil, no damage was caused to the passivated contact consisting of an ultrathin silicon oxide (SiO x ) film and an n + -doped polysilicon (poly-Si) layer after 168 h. With +1000 V bias and under the same chamber conditions, the SiO x /poly-Si (n + ) passivated contact showed a slight change that translated into about 1% module power loss after 168 h, which is significantly lower than the 5% threshold recommended by IEC 62804-1 PID test standard. Furthermore, the SiO x /poly-Si (n + ) passivated contact, even when encapsulated with ethylene-vinyl acetate copolymer films having a low volume resistivity in the range of 5 × 10 14 Ω⸱cm, exhibited good stability under high-voltage stress. The experimental results were also validated by a generic device simulation, where the SiO x /poly-Si (n + ) stack was shown to be immune to the surface polarization effect. In addition, a promising cell-level solution (i.e., using a stack of aluminium oxide and silicon nitride) to the polarization-type PID for n-type passivated emitter rear totally diffused silicon solar cells was also demonstrated.
Source Title: SOLAR ENERGY MATERIALS AND SOLAR CELLS
URI: https://scholarbank.nus.edu.sg/handle/10635/176841
ISSN: 0927-0248
1879-3398
DOI: 10.1016/j.solmat.2019.02.038
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