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https://doi.org/10.1016/j.vacuum.2015.10.027
Title: | Investigation of the thickness effect on material and surface texturing properties of sputtered ZnO:Al films for thin-film Si solar cell applications | Authors: | Yan, Xia Li, Weimin Aberle, Armin G Venkataraj, Selvaraj |
Keywords: | Science & Technology Technology Physical Sciences Materials Science, Multidisciplinary Physics, Applied Materials Science Physics ZnO:Al Film thickness Magnetron sputtering Surface texturing Thin film ZINC-OXIDE FILMS ELECTRICAL-PROPERTIES BACK REFLECTORS ETCHED ZNO AL MORPHOLOGIES DEPOSITION |
Issue Date: | 1-Jan-2016 | Publisher: | PERGAMON-ELSEVIER SCIENCE LTD | Citation: | Yan, Xia, Li, Weimin, Aberle, Armin G, Venkataraj, Selvaraj (2016-01-01). Investigation of the thickness effect on material and surface texturing properties of sputtered ZnO:Al films for thin-film Si solar cell applications. VACUUM 123 : 151-159. ScholarBank@NUS Repository. https://doi.org/10.1016/j.vacuum.2015.10.027 | Abstract: | © 2015 Elsevier Ltd. Transparent conductive Al-doped ZnO (AZO) layers are widely used as the front electrode for thin-film silicon solar cells. For superstrate configurations, the front AZO layer simultaneously provides both electrical conductance and optical scattering. To improve the device performance, a textured surface is needed to enhance the photogeneration inside the solar cell through better light scattering. One approach is to wet-chemically etch the AZO films using hydrochloric (HCl) acid. In this work, AZO films with different initial layer thicknesses (900, 700 and 500 nm) are deposited onto soda-lime glass via magnetron sputtering and their texturing behaviours are compared. It is found that not only the material properties but also the surface texturing process greatly depends on the as-grown thickness of the AZO layer. The increased resistivity is mainly caused by a deteriorating carrier mobility as the thickness reduces. In terms of morphology, thick AZO films (i.e., 900 and 700 nm) show similar texture features after etching. In contrast, the thin AZO films (i.e., 500 nm) show irregularly shaped textures and over-etching, which leads to limited scattering. Hence the AZO layer thickness must be suitably chosen to achieve both good electrical conductance and optical scattering for high-efficiency thin-film Si solar cell applications. | Source Title: | VACUUM | URI: | https://scholarbank.nus.edu.sg/handle/10635/171643 | ISSN: | 0042207X | DOI: | 10.1016/j.vacuum.2015.10.027 |
Appears in Collections: | Staff Publications Elements |
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