Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.vacuum.2015.10.027
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dc.titleInvestigation of the thickness effect on material and surface texturing properties of sputtered ZnO:Al films for thin-film Si solar cell applications
dc.contributor.authorYan, Xia
dc.contributor.authorLi, Weimin
dc.contributor.authorAberle, Armin G
dc.contributor.authorVenkataraj, Selvaraj
dc.date.accessioned2020-07-21T07:09:58Z
dc.date.available2020-07-21T07:09:58Z
dc.date.issued2016-01-01
dc.identifier.citationYan, Xia, Li, Weimin, Aberle, Armin G, Venkataraj, Selvaraj (2016-01-01). Investigation of the thickness effect on material and surface texturing properties of sputtered ZnO:Al films for thin-film Si solar cell applications. VACUUM 123 : 151-159. ScholarBank@NUS Repository. https://doi.org/10.1016/j.vacuum.2015.10.027
dc.identifier.issn0042207X
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/171643
dc.description.abstract© 2015 Elsevier Ltd. Transparent conductive Al-doped ZnO (AZO) layers are widely used as the front electrode for thin-film silicon solar cells. For superstrate configurations, the front AZO layer simultaneously provides both electrical conductance and optical scattering. To improve the device performance, a textured surface is needed to enhance the photogeneration inside the solar cell through better light scattering. One approach is to wet-chemically etch the AZO films using hydrochloric (HCl) acid. In this work, AZO films with different initial layer thicknesses (900, 700 and 500 nm) are deposited onto soda-lime glass via magnetron sputtering and their texturing behaviours are compared. It is found that not only the material properties but also the surface texturing process greatly depends on the as-grown thickness of the AZO layer. The increased resistivity is mainly caused by a deteriorating carrier mobility as the thickness reduces. In terms of morphology, thick AZO films (i.e., 900 and 700 nm) show similar texture features after etching. In contrast, the thin AZO films (i.e., 500 nm) show irregularly shaped textures and over-etching, which leads to limited scattering. Hence the AZO layer thickness must be suitably chosen to achieve both good electrical conductance and optical scattering for high-efficiency thin-film Si solar cell applications.
dc.language.isoen
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD
dc.sourceElements
dc.subjectScience & Technology
dc.subjectTechnology
dc.subjectPhysical Sciences
dc.subjectMaterials Science, Multidisciplinary
dc.subjectPhysics, Applied
dc.subjectMaterials Science
dc.subjectPhysics
dc.subjectZnO:Al
dc.subjectFilm thickness
dc.subjectMagnetron sputtering
dc.subjectSurface texturing
dc.subjectThin film
dc.subjectZINC-OXIDE FILMS
dc.subjectELECTRICAL-PROPERTIES
dc.subjectBACK REFLECTORS
dc.subjectETCHED ZNO
dc.subjectAL
dc.subjectMORPHOLOGIES
dc.subjectDEPOSITION
dc.typeArticle
dc.date.updated2020-07-06T10:47:20Z
dc.contributor.departmentDEPT OF ELECTRICAL & COMPUTER ENGG
dc.contributor.departmentSOLAR ENERGY RESEARCH INST OF S'PORE
dc.description.doi10.1016/j.vacuum.2015.10.027
dc.description.sourcetitleVACUUM
dc.description.volume123
dc.description.page151-159
dc.published.statePublished
dc.description.redepositcompleted
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