Please use this identifier to cite or link to this item: https://doi.org/10.1109/jphotov.2020.2981841
Title: Investigation of Potential-Induced Degradation in Bifacial n-PERL Modules
Authors: Luo, Wei 
Chen, Ning 
Shanmugam, Vinodh 
Yan, Xia 
Duttagupta, Shubham 
Wang, Yan 
Aberle, Armin G 
Khoo, Yong Sheng 
Issue Date: 1-Jul-2020
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Citation: Luo, Wei, Chen, Ning, Shanmugam, Vinodh, Yan, Xia, Duttagupta, Shubham, Wang, Yan, Aberle, Armin G, Khoo, Yong Sheng (2020-07-01). Investigation of Potential-Induced Degradation in Bifacial n-PERL Modules. IEEE Journal of Photovoltaics 10 (4) : 935-939. ScholarBank@NUS Repository. https://doi.org/10.1109/jphotov.2020.2981841
Abstract: A potential-induced degradation (PID) test method for bifacial double-glass silicon modules is first recommended for studying PID effects at the particular side of interest (the front or rear). This could be achieved by maintaining the same electric potential between solar cells and the untargeted module surface. Using the recommended test method, PID effects on the rear of n-type bifacial passivated emitter rear locally-diffused (bifacial n-PERL) devices (n-base passivated with silicon nitride) are studied. The rear of the n-PERL modules exhibits excellent stability under negative-bias conditions (relative to the ground). However, a huge power loss is observed when they are stressed with + 1000 V, likely due to PID-polarization occurring at the rear. The PID damage is recoverable by illuminating the rear module surface with artificial light. Most of the power loss can even be regenerated by several flashes on the module rear side from a solar simulator.
Source Title: IEEE Journal of Photovoltaics
URI: https://scholarbank.nus.edu.sg/handle/10635/171576
ISSN: 21563381
DOI: 10.1109/jphotov.2020.2981841
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