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https://doi.org/10.1109/JPHOTOV.2015.2397593
Title: | Investigation of Wide Process Temperature Window for Amorphous Silicon Suboxide Thin-Film Passivation Deposited by Inductively Coupled PECVD | Authors: | Ge, Jia Tang, Muzhi Wong, Johnson Kai Chi Rolf, Arnold Stangl Zhang, Zhenhao Dippell, Torsten Doerr, Manfred Hohn, Oliver Huber, Marco Wohlfart, Peter Aberle, Armin Gerhard Mueller, Thomas |
Issue Date: | 2015 | Publisher: | IEEE Electron Devices Society | Citation: | Ge, Jia, Tang, Muzhi, Wong, Johnson Kai Chi, Rolf, Arnold Stangl, Zhang, Zhenhao, Dippell, Torsten, Doerr, Manfred, Hohn, Oliver, Huber, Marco, Wohlfart, Peter, Aberle, Armin Gerhard, Mueller, Thomas (2015). Investigation of Wide Process Temperature Window for Amorphous Silicon Suboxide Thin-Film Passivation Deposited by Inductively Coupled PECVD. IEEE Journal of Photovoltaics 5 (3) : 705-710. ScholarBank@NUS Repository. https://doi.org/10.1109/JPHOTOV.2015.2397593 | Source Title: | IEEE Journal of Photovoltaics | URI: | http://scholarbank.nus.edu.sg/handle/10635/123446 | ISSN: | 21563381 | DOI: | 10.1109/JPHOTOV.2015.2397593 |
Appears in Collections: | Staff Publications |
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