Please use this identifier to cite or link to this item: https://doi.org/10.1109/JPHOTOV.2015.2397593
Title: Investigation of Wide Process Temperature Window for Amorphous Silicon Suboxide Thin-Film Passivation Deposited by Inductively Coupled PECVD
Authors: Ge, Jia 
Tang, Muzhi
Wong, Johnson Kai Chi 
Rolf, Arnold Stangl 
Zhang, Zhenhao
Dippell, Torsten
Doerr, Manfred
Hohn, Oliver
Huber, Marco
Wohlfart, Peter
Aberle, Armin Gerhard 
Mueller, Thomas 
Issue Date: 2015
Publisher: IEEE Electron Devices Society
Citation: Ge, Jia, Tang, Muzhi, Wong, Johnson Kai Chi, Rolf, Arnold Stangl, Zhang, Zhenhao, Dippell, Torsten, Doerr, Manfred, Hohn, Oliver, Huber, Marco, Wohlfart, Peter, Aberle, Armin Gerhard, Mueller, Thomas (2015). Investigation of Wide Process Temperature Window for Amorphous Silicon Suboxide Thin-Film Passivation Deposited by Inductively Coupled PECVD. IEEE Journal of Photovoltaics 5 (3) : 705-710. ScholarBank@NUS Repository. https://doi.org/10.1109/JPHOTOV.2015.2397593
Source Title: IEEE Journal of Photovoltaics
URI: http://scholarbank.nus.edu.sg/handle/10635/123446
ISSN: 21563381
DOI: 10.1109/JPHOTOV.2015.2397593
Appears in Collections:Staff Publications

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