Full Name
Naomi Nandakumar
(not current staff)
 
 
Email
sernn@nus.edu.sg
 

Publications

Refined By:
Author:  Nandakumar, N
Author:  Duttagupta, S
Author:  Rodriguez, John

Results 1-6 of 6 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
126-Nov-201821.6% monoPoly <sup>TM</sup> cells with in-situ interfacial oxide and poly-Si layers deposited by inline PECVDNandakumar, N ; Rodriguez, J ; Kluge, T; Grosse, T; Landgraf, D; Balaji, N ; Esber, M ; Padhamnath, P ; Duttagupta, S 
21-Feb-2019Approaching 23% with large-area monoPoly cells using screen-printed and fired rear passivating contacts fabricated by inline PECVDNandakumar, Naomi ; Rodriguez, John ; Kluge, Thomas; Grosse, Thomas; Fondop, Lauretta; Padhamnath, Pradeep ; Balaji, Nagarajan ; Koenig, Marcel; Duttagupta, Shubham 
31-Mar-2019Impact of the manufacturing process on the reverse-bias characteristics of high-efficiency n-type bifacial silicon wafer solar cellsShanmugam, Vinodh ; Chen, Ning ; Yan, Xia ; Khanna, Ankit ; Nagarajan, Balaji ; Rodriguez, John ; Nandakumar, Naomi ; Knauss, Holger; Haverkamp, Helge; Aberle, Armin ; Duttagupta, Shubham 
420-Mar-2022Large-area monoPoly solar cells on 110 μm thin c–Si wafers with a rear n+poly-Si/SiOx stack deposited by inline plasmaenhanced chemical vapour depositionNaomi Nandakumar ; John Woodrofee Rodriguez ; PADHAMNATH PRADEEP ; NITIN NAMPALLI ; Aberle,Armin Gerhard ; Shubham Duttagupta 
526-Nov-2018Single side passivated contact technology exceeding 22.5% with industrial production equipmentKonig, M; Kluge, T; Grosse, T; Sperlich, HP; Makoudjou, LF; Nandakumar, N ; Rodriguez, JW ; Duttagupta, S 
6May-2021‘SolarEYE’ loss analysis of screen-printed, n-type silicon solar cells with ‘monoPoly’ PECVD rear passivated contactsRodriguez, John W ; Nandakumar, Naomi ; Duttagupta, Shubham