Please use this identifier to cite or link to this item: https://doi.org/10.1109/PVSC.2018.8547271
Title: 21.6% monoPoly <sup>TM</sup> cells with in-situ interfacial oxide and poly-Si layers deposited by inline PECVD
Authors: Nandakumar, N 
Rodriguez, J 
Kluge, T
Grosse, T
Landgraf, D
Balaji, N 
Esber, M 
Padhamnath, P 
Duttagupta, S 
Issue Date: 26-Nov-2018
Publisher: IEEE
Citation: Nandakumar, N, Rodriguez, J, Kluge, T, Grosse, T, Landgraf, D, Balaji, N, Esber, M, Padhamnath, P, Duttagupta, S (2018-11-26). 21.6% monoPoly TM cells with in-situ interfacial oxide and poly-Si layers deposited by inline PECVD. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC : 2048-2051. ScholarBank@NUS Repository. https://doi.org/10.1109/PVSC.2018.8547271
Abstract: © 2018 IEEE. Passivated contacts are an increasingly popular option for achieving higher efficiencies in silicon wafer solar cells. In this study, we investigate passivated contacts deposited by inline PECVDto enable easy transfer of this technology to large-scale production. Two types of interfacial oxides fabricatedin-situ by proprietary processes are compared when capped by an electron-selective PECVDn + -doped polycrystalline Si (n + :poly-Si). Passivated contacts with one type of oxide layers perform better achieving a best cell efficiency of 21.6% when used as the rear contact in SERIS' large-area bifacialn-type monoPoly TM solar cells.
Source Title: 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
URI: https://scholarbank.nus.edu.sg/handle/10635/155037
ISBN: 1538685299
9781500000000
DOI: 10.1109/PVSC.2018.8547271
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