Please use this identifier to cite or link to this item: https://doi.org/10.1002/pip.3555
Title: Large-area monoPoly solar cells on 110 μm thin c–Si wafers with a rear n+poly-Si/SiOx stack deposited by inline plasmaenhanced chemical vapour deposition
Authors: Naomi Nandakumar 
John Woodrofee Rodriguez 
PADHAMNATH PRADEEP 
NITIN NAMPALLI 
Aberle,Armin Gerhard 
Shubham Duttagupta 
Keywords: industrial process
large-area
monoPoly
passivated contacts
PECVD
screen-printed
silicon solar cells
thin silicon wafer
Issue Date: 20-Mar-2022
Publisher: Wiley
Citation: Naomi Nandakumar, John Woodrofee Rodriguez, PADHAMNATH PRADEEP, NITIN NAMPALLI, Aberle,Armin Gerhard, Shubham Duttagupta (2022-03-20). Large-area monoPoly solar cells on 110 μm thin c–Si wafers with a rear n+poly-Si/SiOx stack deposited by inline plasmaenhanced chemical vapour deposition. Progress in Photovoltaics: Research and Applications. ScholarBank@NUS Repository. https://doi.org/10.1002/pip.3555
Abstract: We present an overview of SERIS' monoPoly technology on screen-printed, M2-size (244.4 cm2) n-type bifacial silicon solar cells with a rear n+:poly-Si/SiOx passivating contact stack, where the SiOx and n+:poly-Si layers are fabricated by single-side inline plasma-enhanced chemical vapour deposition (PECVD). We demonstrate the application of these stacks on thin (~110 μm) silicon wafers, giving an excellent open-circuit voltage of 707 mV and an externally verified cell efficiency of 23.2% using commercial screen-printed and fire-through metal pastes. A detailed power analysis is presented, with a breakdown of the voltage and current losses. Finally, we share the progress on standard wafers with an efficiency of 23.8% achieved and present the outlook for this technology with a selective passivating contact stack at the front and a full-area passivating contact stack at the rear.
Source Title: Progress in Photovoltaics: Research and Applications
URI: https://scholarbank.nus.edu.sg/handle/10635/217437
ISSN: 1062-7995
1099-159X
DOI: 10.1002/pip.3555
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