Feng Zhe Chuan

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Full Name

Feng Zhe Chuan

Variants

Feng, Z.C.
Feng, Z.-C.

Main Affiliation

PHYSICS

Faculty

FAC OF SCIENCE

Refined By:

Department: ELECTRICAL AND COMPUTER ENGINEERING

Results 1-9 of 9 (Search time: 0.004 seconds).

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	Issue Date	Title	Author(s)
1	5-Apr-1999	Enhanced optical emission from GaN films grown on a silicon substrate	Zhang, X. ; Chua, S.-J. ; Li, P.; Chong, K.-B. ; Feng, Z.-C.
2	2000	Excitation power dependence of photoluminescence spectra of CdTe on InSb grown by molecular-beam epitaxy	Chang, W.Y.; Feng, Z.C. ; Chua, S.J. ; Lin, J.
3	Feb-1995	Growth and investigation of quaternary III-III-III-V InGaAlAs alloy layers on InP by molecular beam epitaxy	Feng, Z.C. ; Chua, S.J. ; Raman, A. ; Williams, K.J.
4	2000	Infrared reflectance study of chemical vapor deposition grown 3C-silicon carbide on silicon substrate	Chang, W.Y.; Feng, Z.C. ; Chua, S.J. ; Lin, J.
5	1999	Luminescence, morphology and X-ray diffraction features of InGaN materials grown on sapphire by metalorganic chemical vapor deposition	Li, P.; Chua, S.J. ; Feng, Z.C. ; Wang, W.; Hao, M.S.; Sugahara, T.; Sakai, S.
6	1994	Optical and x-ray diffraction characterization of MBE-grown InGaAs, InAIAs and InGaAIAs on InP	Feng, Z.C. ; Chua, S.J. ; Raman, A.; Lim, N.N.
7	1999	Raman scattering and transverse effective charge of MOCVD-grown GaN films between 78 and 870 K	Li, W.S. ; Shen, Z.X. ; Feng, Z.C. ; Chua, S.J.
8	1995	Relativistic band structure of ternary II-VI semiconductor alloys containing Cd, Zn, Se and Te	Poon, H.C. ; Feng, Z.C. ; Feng, Y.P. ; Li, M.F.
9	1999	Structural and optical properties of GaN materials grown on Si by metalorganic chemical vapor deposition	Chen, J.L.; Feng, Z.C. ; Zhang, X.; Chua, S.J. ; Hou, Y.T. ; Lin, J.