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Title: Enhanced optical emission from GaN films grown on a silicon substrate
Authors: Zhang, X. 
Chua, S.-J. 
Li, P.
Chong, K.-B. 
Feng, Z.-C. 
Issue Date: 5-Apr-1999
Citation: Zhang, X.,Chua, S.-J.,Li, P.,Chong, K.-B.,Feng, Z.-C. (1999-04-05). Enhanced optical emission from GaN films grown on a silicon substrate. Applied Physics Letters 74 (14) : 1984-1986. ScholarBank@NUS Repository.
Abstract: GaN films were grown on a silicon wafer by metallorganic chemical vapor deposition. The substrate was composed of composite intermediate layers of ultrathin amorphous silicon films and a GaN/AlGaN multilayered buffer. The enhanced optical emission characteristics and crystallinity of the samples were determined by photoluminescence and X-ray diffraction spectroscopy.
Source Title: Applied Physics Letters
ISSN: 00036951
Appears in Collections:Staff Publications

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