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|Title:||Enhanced optical emission from GaN films grown on a silicon substrate||Authors:||Zhang, X.
|Issue Date:||5-Apr-1999||Citation:||Zhang, X.,Chua, S.-J.,Li, P.,Chong, K.-B.,Feng, Z.-C. (1999-04-05). Enhanced optical emission from GaN films grown on a silicon substrate. Applied Physics Letters 74 (14) : 1984-1986. ScholarBank@NUS Repository.||Abstract:||GaN films were grown on a silicon wafer by metallorganic chemical vapor deposition. The substrate was composed of composite intermediate layers of ultrathin amorphous silicon films and a GaN/AlGaN multilayered buffer. The enhanced optical emission characteristics and crystallinity of the samples were determined by photoluminescence and X-ray diffraction spectroscopy.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/62138||ISSN:||00036951|
|Appears in Collections:||Staff Publications|
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