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|Title:||Infrared reflectance study of chemical vapor deposition grown 3C-silicon carbide on silicon substrate||Authors:||Chang, W.Y.
|Issue Date:||2000||Citation:||Chang, W.Y.,Feng, Z.C.,Chua, S.J.,Lin, J. (2000). Infrared reflectance study of chemical vapor deposition grown 3C-silicon carbide on silicon substrate. Proceedings of SPIE - The International Society for Optical Engineering 4078 : 203-210. ScholarBank@NUS Repository.||Abstract:||Room Temperature (RT) Infrared (IR) Reflectance spectra are studied both theoretically and experimentally on 3C-SiC films grown on silicon (100) substrate by low pressure chemical vapor deposition (LPCVD). By the use of transfer matrix method, the spectral features influenced by film thickness, phonon-damping constant and free carrier concentration are systematically studied. Comparisons of reflectance spectra are made between experimental spectra and those of ideal samples. A modified effective medium model with consideration of the presence of interfacial layer is introduced to interpret some unusual features. Although some of our results are qualitative, careful analysis of reflectance spectra does provide valuable information about film quality.||Source Title:||Proceedings of SPIE - The International Society for Optical Engineering||URI:||http://scholarbank.nus.edu.sg/handle/10635/72700||ISSN:||0277786X|
|Appears in Collections:||Staff Publications|
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