Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/72700
Title: Infrared reflectance study of chemical vapor deposition grown 3C-silicon carbide on silicon substrate
Authors: Chang, W.Y.
Feng, Z.C. 
Chua, S.J. 
Lin, J. 
Issue Date: 2000
Source: Chang, W.Y.,Feng, Z.C.,Chua, S.J.,Lin, J. (2000). Infrared reflectance study of chemical vapor deposition grown 3C-silicon carbide on silicon substrate. Proceedings of SPIE - The International Society for Optical Engineering 4078 : 203-210. ScholarBank@NUS Repository.
Abstract: Room Temperature (RT) Infrared (IR) Reflectance spectra are studied both theoretically and experimentally on 3C-SiC films grown on silicon (100) substrate by low pressure chemical vapor deposition (LPCVD). By the use of transfer matrix method, the spectral features influenced by film thickness, phonon-damping constant and free carrier concentration are systematically studied. Comparisons of reflectance spectra are made between experimental spectra and those of ideal samples. A modified effective medium model with consideration of the presence of interfacial layer is introduced to interpret some unusual features. Although some of our results are qualitative, careful analysis of reflectance spectra does provide valuable information about film quality.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/72700
ISSN: 0277786X
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

25
checked on Dec 9, 2017

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.