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|Title:||Excitation power dependence of photoluminescence spectra of CdTe on InSb grown by molecular-beam epitaxy||Authors:||Chang, W.Y.
|Issue Date:||2000||Citation:||Chang, W.Y.,Feng, Z.C.,Chua, S.J.,Lin, J. (2000). Excitation power dependence of photoluminescence spectra of CdTe on InSb grown by molecular-beam epitaxy. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS 2 : 786-787. ScholarBank@NUS Repository.||Abstract:||LT PL spectra of CdTe grown on InSb were studied. It was found that the spectral features in the 1.4-1.5 eV range consist of three sets of DAP recombination emissions with different values of Huang-Rhys contrast.||Source Title:||Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS||URI:||http://scholarbank.nus.edu.sg/handle/10635/72620||ISSN:||10928081|
|Appears in Collections:||Staff Publications|
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