Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/72620
Title: Excitation power dependence of photoluminescence spectra of CdTe on InSb grown by molecular-beam epitaxy
Authors: Chang, W.Y.
Feng, Z.C. 
Chua, S.J. 
Lin, J. 
Issue Date: 2000
Source: Chang, W.Y.,Feng, Z.C.,Chua, S.J.,Lin, J. (2000). Excitation power dependence of photoluminescence spectra of CdTe on InSb grown by molecular-beam epitaxy. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS 2 : 786-787. ScholarBank@NUS Repository.
Abstract: LT PL spectra of CdTe grown on InSb were studied. It was found that the spectral features in the 1.4-1.5 eV range consist of three sets of DAP recombination emissions with different values of Huang-Rhys contrast.
Source Title: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
URI: http://scholarbank.nus.edu.sg/handle/10635/72620
ISSN: 10928081
Appears in Collections:Staff Publications

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