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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/72620
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dc.titleExcitation power dependence of photoluminescence spectra of CdTe on InSb grown by molecular-beam epitaxy
dc.contributor.authorChang, W.Y.
dc.contributor.authorFeng, Z.C.
dc.contributor.authorChua, S.J.
dc.contributor.authorLin, J.
dc.date.accessioned2014-06-19T05:10:06Z
dc.date.available2014-06-19T05:10:06Z
dc.date.issued2000
dc.identifier.citationChang, W.Y.,Feng, Z.C.,Chua, S.J.,Lin, J. (2000). Excitation power dependence of photoluminescence spectra of CdTe on InSb grown by molecular-beam epitaxy. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS 2 : 786-787. ScholarBank@NUS Repository.
dc.identifier.issn10928081
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/72620
dc.description.abstractLT PL spectra of CdTe grown on InSb were studied. It was found that the spectral features in the 1.4-1.5 eV range consist of three sets of DAP recombination emissions with different values of Huang-Rhys contrast.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentPHYSICS
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
dc.description.volume2
dc.description.page786-787
dc.description.codenCPLSE
dc.identifier.isiutNOT_IN_WOS
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