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Lee Tek Po,Rinus

rp07050

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Full Name
Lee Tek Po,Rinus
(not current staff)
Variants
Lee, R.T.P.
Lee, R.T.-P.
 
Main Affiliation
 
Faculty
 
Email
eleltpr@nus.edu.sg
 

Publications

Refined By:
Type:  Article
Department:  ELECTRICAL AND COMPUTER ENGINEERING
Department:  COLLEGE OF DESIGN AND ENGINEERING
Author:  Lee, R.T.-P.
Date Issued:  2009

Results 1-8 of 8 (Search time: 0.003 seconds).

Issue DateTitleAuthor(s)
12009Achieving sub-0.1 ev hole schottky barrier height for NiSiGe on SiGe by aluminum segregationSinha, M.; Lee, R.T.P. ; Lohani, A.; Mhaisalkar, S.; Chor, E.F. ; Yeo, Y.-C. 
22009Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon filmsLim, P.S.Y.; Lee, R.T.P. ; Sinha, M.; Chi, D.Z.; Yeo, Y.-C. 
32009Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drainTan, K.-M.; Yang, M.; Fang, W.-W.; Lim, A.E.-J.; Lee, R.T.-P. ; Liow, T.-Y.; Yeo, Y.-C. 
42009Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs)Lee, R.T.P. ; Chi, D.Z.; Yeo, Y.-C. 
5Dec-2009Schottky barrier height modulation of nickeldysprosium-alloy germanosilicide contacts for strained P-FinFETsSinha, M.; Lee, R.T.P. ; Chor, E.F. ; Yeo, Y.-C. 
62009Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistanceLee, R.T.-P. ; Lim, A.E.-J.; Tan, K.-M.; Liow, T.-Y.; Chi, D.Z.; Yeo, Y.-C. 
72009The role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressorsLee, R.T.P. ; Koh, A.T.-Y.; Tan, K.-M.; Liow, T.-Y.; Chi, D.Z.; Yeo, Y.-C. 
82009Ultra high-stress liner comprising diamond-like carbon for performance enhancement of p-channel multiple-gate transistorsTan, K.-M.; Yang, M.; Liow, T.-Y.; Lee, R.T.P. ; Yeo, Y.-C.